PMEG2010EPAS_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG2010EPAS
20 V, 1 A low VF MEGA Schottky barrier rectifier
Symbol
V_F
I_R
Parameter
forward voltage
reverse current
Conditions
I_F = 1 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C; pulsed
V_R = 20 V; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C; pulsed
Min Typ Max Unit
-
320 375 mV
-
335 1900 µA
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A
anode
2
A
anode
3
K
cathode
Simplified outline
3
Graphic symbol
3
1, 2
006aab624
1
2
Transparent top view
DFN2020D-3 (SOT1061D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMEG2010EPAS
DFN2020D-3 DFN2020D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
Version
SOT1061D
7. Marking
Table 4. Marking codes
Type number
PMEG2010EPAS
Marking code
CR
PMEG2010EPAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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