PHN103 Datasheet, PDF (9/12 Pages) NXP Semiconductors – N-channel enhancement mode MOS transistor

Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
PHN103
1.2
handbook, halfpage
k
1.1
MGG338
1
0.9
0.8
0.7
0.6
−100 −50
0
50
100
150
Tj (°C)
k = _V-----G^V----_SG---_t-^Sh---^t--^h_{a---t--a--2-t--5--T--°}--^j-C---
V_GSth at V_DS = V_GS; I_D = 1 mA.
Fig.12 Temperature coefficient of gate-source
threshold voltage; typical values.
1.6
handbook, halfpage
k
1.4
1.2
MGG339
(1)
(2)
1
0.8
0.6
0.4
−100 −50
0
50
100
150
Tj (°C)
k = _R-----D-R---_S-^D--_o--^S-_n--^o--a-ⁿ---t--a-2--t-5---T---_°-^j--C---
(1) R_DSon at V_GS = 10 V; I_D = 5.5 A.
(2) R_DSon at V_GS = 4.5 V; I_D = 2.75 A.
Fig.13 Temperature coefficient of drain-source
on-state resistance; typical values.
1997 Jun 20
9