PHN103 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode MOS transistor

Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
PHN103
handbo²o⁵k,⁰h⁰alfpage
C
(pF)
2000
MGG332
1500
1000
(1)
500
(2)
0
0
10
V_GS = 0; f = 1 MHz; T_j = 25 °C.
(1) C_iss.
(2) C_oss.
(3) C_rss.
(3)
20 _{VDS (V)} 30
Fig.6 Capacitance as a function of drain-source
voltage; typical values.
handbook,⁴h⁰alfpage
ID
(A) _{(1) (2)}
30
MGG333
(3)
20
(4)
10
(5)
(6)
0
0
2
4
6
8
10
VDS (V)
T_j = 25 °C.
(1) V_GS = 10 V.
(2) V_GS = 5 V.
(3) V_GS = 4 V.
(4) V_GS = 3.5 V.
(5) V_GS = 3 V.
(6) V_GS = 2.5 V.
Fig.7 Output characteristics; typical values.
40
handbook, halfpage
ID
(A)
30
20
10
0
0
2
MGG334
4 _{VGS (V)} 6
V_DS = 10 V; T_j = 25 °C.
Fig.8 Transfer characteristic; typical value.
1997 Jun 20
10
handbook, halfpage
VGS
(V)
8
6
4
2
0
0
10
MGG335
20 _{QG (nC)} 30
V_DD = 15 V; I_D = 4 A.
Fig.9 Gate-source voltage as a function of total
gate charge; typical values.
7