PHN103 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel enhancement mode MOS transistor

Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
PHN103
FEATURES
• High-speed switching
• No secondary breakdown
• Very low on-state resistance.
APPLICATIONS
• Motor and actuator driver
• Power management
• Synchronized rectification.
DESCRIPTION
N-channel enhancement mode MOS transistor in an 8-pin
plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN SYMBOL
DESCRIPTION
1
n.c not connected
2
s
source
3
s
source
4
g
gate
5
d
drain
6
d
drain
7
d
drain
8
d
drain
handbook, halfpage
8
5
dddd
1
4
MAM116
n.c. s s g
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_DS
V_SD
V_GS
V_GSth
I_D
R_DSon
P_tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
CONDITIONS
I_S = 1.25 A
I_D = 1 mA; V_DS = V_GS
T_s = 80 °C
I_D = 5.5 A; V_GS = 10 V
T_s = 80 °C
MIN.
−
−
−
1
−
−
−
MAX.
30
1
±20
2.8
8.5
0.03
4
UNIT
V
V
V
V
A
Ω
W
1997 Jun 20
2