BUK7C10-75AITE Datasheet, PDF (9/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
100
ID
(A)
75
50
25
0
0.0
03ni78
175 °C
Tj = 25 °C
2.0
4.0 _{VGS (V)} 6.0
10
VGS
(V)
8
6
4
2
0
0
03ni92
14 V
VDS = 60 V
50
100 _{QG (nC)} 150
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
700
V_F
(mV)
03ne84
1.70
-SF
(mV/K)
1.65
max
03ne85
600
1.60
1.55
typ
500
1.50
1.45
min
400
0
50
100
150 _{Tj (ºC)} 200
1.40
645 650 655 660 665 670 675
VF (mV)
I_F = 250 µA
Fig 15. Forward voltage of temperature sense diode as
a function of junction temperature; typical
values.
V_F at T_j = 25 °C; I_F = 250 µA
Fig 16. Temperature coefficient of temperature sense
diode as a function of forward voltage; typical
values.
9397 750 11048
Product data
Rev. 02 — 18 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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