BUK7C10-75AITE Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
350
ID
(A)
280
210
140
70
0
0
10
20
03ni74
9
label is VGS (V)
8.5 ₈
7.5
7
6.5
6
5.5
5
4.5
2
4
6
8
10
VDS (V)
18
RDSon
(mΩ)
14
03ni76
10
6
5
10
15 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03ni75
20
2.4
RDSon ^{VGS = 5.5 V 6 V 6.5 V 7 V}
8V
a
(mΩ)
16
1.6
10 V
20 V
12
0.8
03nb25
8
0
70
140
210
280 _{ID (A)350}
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C; t_p = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11048
Product data
Rev. 02 — 18 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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