BUK7C10-75AITE Datasheet, PDF (6/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
Table 4: Characteristics…continued
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
L_d
internal drain inductance
measured from upper edge
-
of drain mounting base to
centre of die
L_s
internal source inductance measured from source lead
-
to source bond pad
Source-drain diode
V_SD
source-drain (diode forward) I_S = 25 A; V_GS = 0 V;
-
voltage
Figure 18
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
-
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
-
Typ
Max
Unit
2.5
-
nH
7.5
-
nH
0.85
1.2
V
75
-
ns
270
-
nC
9397 750 11048
Product data
Rev. 02 — 18 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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