BUK7C10-75AITE Datasheet, PDF (10/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK7C10-75AITE
TrenchPLUS standard level FET
600
ID/Isense
550
03ni98
500
450
400
4
8
12
16
20
VGS (V)
I_D = 25 A
Fig 17. Drain-sense current ratio as a function of
gate-source voltage; typical values.
100
03ni79
IS
(A)
75
50
25
0
0.0
175 °C
Tj = 25 °C
0.4
0.8
1.2 _{VSD (V)} 1.6
V_GS = 0 V
Fig 18. Reverse diode current as function of reverse
diode voltage; typical values.
9397 750 11048
Product data
Rev. 02 — 18 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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