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BUK7C10-75AITE Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchPLUS standard level FET
BUK7C10-75AITE
TrenchPLUS standard level FET
Rev. 02 — 18 March 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance. Also includes
TrenchPLUS current sensing, and diodes for ESD and temperature protection.
Product availability:
BUK7C10-75AITE in SOT427 (D2-PAK).
1.2 Features
s Q101 compliant
s ESD protection
s Integrated temperature sensor
s Integrated current sensor.
1.3 Applications
s Variable Valve Timing for engines
s Automotive and power switching
s Electrical Power Assisted Steering
s Fan control.
1.4 Quick reference data
s VDS ≤ 75 V
s ID ≤ 114 A
s RDSon = 8.8 mΩ (typ)
s VF = 658 mV (typ)
s SF = −1.54 mV/K (typ)
s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pinning - SOT427 (D2-PAK) simplified outline and symbol
Pin Description Pin Description Simplified outline
1
gate (g)
5
cathode (k)
2
Isense
6
Kelvin source
mb
3
anode (a)
7
source (s)
4
drain (d)
mb mounting base;
connected to
drain (d)
1234567
Front view
MBK128
SOT427 (D2-PAK)
Symbol
d
a
g
MBL362
s
k
Isense
Kelvin source