BUK7607-55B_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
6
4
2
0
0
V_DD = 14 (V)
03nn59
V_DD = 44 (V)
20
40 _{QG (nC)} 60
4000
C
(pF)
3000
2000
C_ISS
03nn65
C_OSS
1000
C_RSS
0
10^-2
10^-1
1
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
100
I_S
(A)
75
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03nn58
50
25
0
0.0
T_j = 175 °C
T_j = 25 °C
0.5
1.0 _{VSD (V)} 1.5
Fig 15. Source current as a function of source-drain voltage; typical values
BUK7607-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
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