BUK7607-55B_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7607-55B
N-channel TrenchMOS standard level FET
Rev. 2 — 26 July 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Q101 compliant
 Suitable for standard level gate drive
sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
-
55 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; ^[1] -
-
75 A
see Figure 1; see Figure 3
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
-
-
203 W
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 11;
see Figure 12
-
5.8 7.1 mΩ
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 75 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
-
-
351 mJ
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 25 A;
V_DS = 44 V; T_j = 25 °C;
see Figure 13
-
17 -
nC
[1] Continuous current is limited by package.