BUK7607-55B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
300
I_{D 10}
(A)
20
200
100
0
0
2
9
V_GS = 8.5 (V)
03nn63
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8 _{VDS (V)10}
25
R_DSon
(mΩ )
20
15
10
5
0
5
03nn62
10
15 _{VGS (V)} 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
03aa35
60
I_D
(A)
g_fs
10^−2
min typ max
(S)
40
10^−3
03nn60
10^−4
20
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
25
50
75 _{ID (A)} 100
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7607-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
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