BUK7607-55B_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7607-55B
N-channel TrenchMOS standard level FET
120
I_D
(A)
80
(1)
40
03nn68
120
P_der
(%)
80
40
03na19
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
Limit R_DSon = V_DS / I_D
(A)
10²
(1)
10
1
10^-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nn66
tp = 10 μs
100 μs
1 ms
10 ms
DC
100 ms
10
V_DS (V)
10²
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7607-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 26 July 2011
© NXP B.V. 2011. All rights reserved.
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