BUK7108-40AIE Datasheet, PDF (9/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
100
03nn74
ID
(A)
75
50
175 °C
25
Tj = 25 °C
10
VGS
(V)
8
6
4
2
03nn77
VDS = 14 V
32 V
0
0
2
4
6 _{VGS (V)} 8
0
0
25
50
75
100
QG (nC)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
600
ID/Isense
550
500
450
03nn79
6
RD(Is)on
(Ω)
4
2
03nn78
400
4
8
12
16 _{VGS (V)} 20
I_D = 25 A; R_sense = 0 Ω
Fig 15. Drain-sense current ratio as a function of
gate-source voltage; typical values.
0
4
8
12
16 _{VGS (V)} 20
I_sense = 25 mA
Fig 16. Drain-I_sense on-state resistance as function of
gate-source voltage; typical values.
9397 750 12086
Product data
Rev. 02 — 24 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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