BUK7108-40AIE Datasheet, PDF (3/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
120
Pder
(%)
80
40
03na19
120
ID
(A)
80
Capped at 75 A due to package
40
03ni93
0
0
50
100
150
200
Tmb _(°C)
P_der
=
-------^P----^t--^o---^t-------
P
×
100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
103
ID
(A)
Limit RDSon = VDS / ID
102
Capped at 75 A due to package
10
0
0
50
V_GS ≥ 10 V
100
150
200
Tmb (°C)
Fig 2. Continuous drain current as a function of
mounting base temperature.
03nl55
tp = 10 µ s
100 µ s
1 ms
DC
10 ms
100 ms
1
1
10
VDS (V)
102
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12086
Product data
Rev. 02 — 24 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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