BUK7108-40AIE Datasheet, PDF (5/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
6. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Static characteristics
V_(BR)DSS
V_GS(th)
drain-source breakdown
voltage
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
I_DSS
V_(BR)GSS
I_GSS
R_DSon
drain-source leakage current
gate-source breakdown
voltage
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 40 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
I_G = ±1 mA;
−55 °C < T_j < 175 °C
V_GS = ±10 V; V_DS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = 10 V; I_D = 50 A;
Figure 7 and 8
R_D(Is)on
drain-I_sense on-state
resistance
T_j = 25 °C
T_j = 175 °C
V_GS = 10 V; I_D = 25 mA;
Figure 16
I_D/I_sense
ratio of drain current to sense
current
Dynamic characteristics
T_j = 25 °C
T_j = 175 °C
V_GS > 10 V; R_sense = 0 Ω;
−55 °C < T_j < 175 °C
Q_g(tot)
Q_gs
Q_gd
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V_GS = 10 V; V_DS = 32 V;
I_D = 25 A; Figure 14
V_GS = 0 V; V_DS = 25 V;
f = 1 MHz; Figure 12
V_DS = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G = 10 Ω
Min
Typ
Max
Unit
40
-
-
V
36
-
-
V
2
3
4
V
1
-
-
V
-
-
4.4
V
-
0.1
10
µA
-
-
250
µA
20
22
-
V
-
22
300
nA
-
-
10
µA
-
6
8
mΩ
-
-
15.2
mΩ
1.59
1.87
2.20
Ω
3.02
3.55
4.18
Ω
450
500
550
-
78
84
nC
-
14
16
nC
-
34
36
nC
-
2 670
3140
pF
-
900
1053
pF
-
560
653
pF
-
19
-
ns
-
76
-
ns
-
121
-
ns
-
122
-
ns
9397 750 12086
Product data
Rev. 02 — 24 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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