BUK7108-40AIE Datasheet, PDF (6/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
L_d
internal drain inductance
measured from upper edge
-
of drain mounting base to
center of die
L_s
internal source inductance measured from source lead
-
to source bond pad; lead
length 6 mm
Source-drain diode
V_SD
source-drain (diode forward) I_S = 40 A; V_GS = 0 V;
-
voltage
Figure 17
t_rr
reverse recovery time
I_S = 20 A; dI_S/dt = −100 A/µs
-
Q_r
recovered charge
V_GS = −10 V; V_DS = 30 V
-
Typ
Max
Unit
2.5
-
nH
7.5
-
nH
0.85
1.2
V
55
-
ns
30
-
nC
9397 750 12086
Product data
Rev. 02 — 24 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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