BUK7108-40AIE Datasheet, PDF (7/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7908-40AIE
TrenchPLUS standard level FET
400
ID
10
9
(A)
20
300
200
100
0
0
2
4
03nn70
Label is VGS (V)
8.5
8
7.5
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
16
RDSon
(Ω)
12
8
4
0
4
03nn72
8
12
16 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nn71
2
20
a
RDSon
5.5 _{6 6.5}
Label is VGS (V)
(mΩ)
16
7 _{7.5 8}
1.6
1.2
12
0.8
03ni30
10
8
20
4
0
100
200
300 _{ID (A)} 400
0.4
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C; t_p = 300 µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -_R---_D----^R_S---_oD---_n-^S-₍--^o2--₅-ⁿ--_°--_C---₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12086
Product data
Rev. 02 — 24 October 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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