BUK6215-75C_15 Datasheet, PDF (9/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK6215-75C
N-channel TrenchMOS FET
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
V_GS
(V)
8
6
4 ^{VDS= 14V}
2
0
0
20
003aae768
V_DS= 60V
40
60 _{QG (nC)} 80
Fig 13. Gate charge waveform definitions
10⁴
C
(pF)
10³
10²
003aae769
C_iss
C_oss
C_rss
10
10^-1
1
10
10²
V_DS (V)
Fig 14. Gate-source voltage as a function of gate
charge; typical values
003aae767
80
I_S
(A)
60
40
T_j = 175 °C
20
T_j = 25 °C
0
0
0.3
0.6
0.9
1.2V_{SD (V)1.5}
Fig 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16. Source current as a function of source-drain
voltage; typical values
BUK6215-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
9 of 14