BUK6215-75C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

BUK6215-75C
N-channel TrenchMOS FET
Rev. 02 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Compatable with logic and standard
level gate drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V Automotive systems
„ Electric and electro-hydraulic power
steering
„ Engine management
„ Motors, lamps and solenoid control
„ Start-Stop micro-hybrid applications
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source
V_GS = 10 V; I_D = 15 A; T_j = 25 °C;
on-state resistance see Figure 11
Min Typ Max Unit
-
-
75 V
-
-
57 A
-
-
128 W
-
12.5 15 mΩ