BUK6215-75C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK6215-75C
N-channel TrenchMOS FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
51
-
ns
-
117 -
nC
100
g_fs
(S)
80
60
40
20
0
0
003aae760
20
40 _{ID (A)}
60
60
I_D
(A)
40
20
0
0
10.0 6.0 4.5
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4.0
V_GS(V) = 3.8
3.6
3.4
3.3
3.2
0.5
1
1.5 _VDS(V) 2
Fig 5. Forward transconductance as a function of
drain current; typical values
80
I_D
(A)
60
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40
20
0
0
T_j = 175 °C
T_j = 25 °C
2
4 _VGS(V) 6
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
20
R_DSon
(mΩ)
18
003aae763
16
14
12
10
0
4
8
12
16V_{GS (V)20}
Fig 7. Transfer characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
function of gate-source voltage; typical values
of gate-source voltage; typical values.
BUK6215-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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