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| BUK6215-75C_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET | |||
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NXP Semiconductors
BUK6215-75C
N-channel TrenchMOS FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
LS
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 9
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 9
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 11
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
see Figure 11
VGS = 5 V; ID = 15 A; Tj = 25 °C;
see Figure 11
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 60 V; VGS = 5 V;
see Figure 13; see Figure 14
ID = 25 A; VDS = 60 V; VGS = 10 V;
see Figure 13; see Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 15
VDS = 55 V; RL = 2.2 â¦; VGS = 10 V;
RG(ext) = 10 â¦
from upper edge of drain mounting
base to centre of die. ; Tj = 25 °C
from source lead to source bond
pad ; Tj = 25 °C
Min Typ Max Unit
75 -
-
V
68 -
-
V
1.8 2.3 2.8 V
-
-
3.3 V
0.8 -
-
V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
12.5 15 mâ¦
-
15.3 20.5 mâ¦
-
14.4 18 mâ¦
-
-
39 mâ¦
-
34.8 -
nC
-
61.8 -
nC
-
8.7 -
nC
-
18.8 -
nC
-
2920 3900 pF
-
240 290 pF
-
159 220 pF
-
16.6 -
ns
-
37.4 -
ns
-
126 -
ns
-
69
-
ns
-
3.5 -
nH
-
7.5 -
nH
BUK6215-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 4 October 2010
© NXP B.V. 2010. All rights reserved.
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