BUK6215-75C_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
60
I_D
(A)
40
003aae770
120
P_der
(%)
80
BUK6215-75C
N-channel TrenchMOS FET
03aa16
20
40
0
0
50
100
150 _Tmb(°C) 200
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
10⁴
I_D
(A)
10³
10²
Limit R_DSon = V_DS / I_D
10
1
10^-1
10^-1
1
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aae764
tp = 10 μs
100 μ s
DC
1 ms
10 ms
100 ms
10
10²
10³
V _DS(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK6215-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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