BUK215-50YT Datasheet, PDF (9/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version

Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
3 ^{VIG / V}
BUK215-50YT
2.5
2
V_IG(ON)
V_IG(OFF)
1.5
1
-50
0
50 _{Tj / OC} 100
150
200
Fig.16. Typical threshold voltage characteristic.
V_IG = f(T_j); condition 9V V_BG 16V
7.50 ^{VIG / V}
BUK215-50YT
7.40
7.30
7.20
7.10
7.00
6.90
6.80
6.70
6.60
6.50
-50
0
50 _{Tj /} O_C 100
150
200
Fig.17. Typical input clamping voltage.
V_IG = f(T_j); condition I_I = 200 A, V_BG = 13V
8 ^{IS / mA}
BUK215-50YT
6
4
2
0
0
1
2
3
4
5
V_SG / V
Fig.18. Typical status low characteristic, T_j = 25 ˚C.
I_S = f(V_SG); conditions V_IG = 5V, V_BG = 13V,I_L = 0A
7.50 ^{VSG / V}
7.40
BUK215-50YT
V_IG / V = ₅
7.30
7.20
7.10
0
7.00
6.90
6.80
6.70
6.60
6.50
-50
0
50 _{Tj /} O_C 100
150
200
Fig.19. Typical status clamping voltage.
V_SG = f(T_j); condition I_S = 100 A, V_BG = 13V
20 ^{IS / mA}
BUK215-50YT
15
10
5
0
0
2
4
6
8
10
V_SG / V
Fig.20. Typical status characteristic, T_j = 25 ˚C.
I_S = f(V_SG); conditions V_IG = V_BG = 0V
65 ^{VBG / V}
60
BUK215-50YT
I_G =
200 mA
1 mA
55
50
-50
Fig.21.
0
50 _{Tj / OC} 100
150
200
Typical battery to ground clamping voltage.
V_BG = f(T_j); parameter I_G
June 2000
9
Rev 1.000