BUK215-50YT Datasheet, PDF (2/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version

Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
V_BG
I_L
P_D
T_stg
T_j
T_sold
-V_BG
-V_BG
R_I, R_S
Continuous supply voltage
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature¹
Mounting base temperature
Reverse battery voltages²
Continuous reverse voltage
Peak reverse voltage
Application information
External resistors³
Input and status
T_mb 95˚C
T_mb 25˚C
during soldering
to limit input, status currents
I_I, I_S
Continuous currents
I_I, I_S
Repetitive peak currents
Inductive load clamping
E_BL
Non-repetitive clamping energy
0.1, tp = 300 s
I_L = 10 A, V_BG = 16 V
T_j 150˚C prior to turn-off
ESD LIMITING VALUE
SYMBOL PARAMETER
V_C
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 k
MIN.
0
-
-
-55
-
-
-
-
3.2
-5
-50
-
MIN.
-
MAX.
50
20
67
175
150
260
16
32
-
5
50
150
MAX.
2
UNIT
V
A
W
˚C
˚C
˚C
V
V
k
mA
mA
mJ
UNIT
kV
THERMAL CHARACTERISTICS
SYMBOL PARAMETER
Thermal resistance⁴
R_{th j-mb}
Junction to mounting base
CONDITIONS
-
MIN. TYP. MAX. UNIT
- 1.52 1.86 K/W
1 For normal continuous operation. A higher T_j is allowed as an overload condition but at the threshold T_j(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T_j
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
June 2000
2
Rev 1.000