BUK215-50YT Datasheet, PDF (7/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version

Philips Semiconductors
TOPFET high side switch
SMD version
VBG
VSG
VIG
VBL
IB
II
B
I
TOPFET
IL
IS
HSS ^L
S
G
VLG
RS
IG
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
80 ^{RON / mOhm}
60
40
20
BUK215-50YT
typ .
V_BG = 6 V
9 V =< V_BG =< 35 V
0
-50
0
50 _{Tj / OC} 100
150
200
Fig.5. Typical on-state resistance, t_p = 300 s.
R_ON = f(T_j); parameter V_BG; condition I_L = 10 A
I_L / A
50
40
30
BUK215-50YT
V_BG / V _{> = 8}
7
6
5
20
10
0
0
Fig.6.
1
2
V_BL / V
Typical on-state characteristics, T_j = 25 ˚C.
I_L = f(T_j); parameter V_BG; t_p = 250 s
Product Specification
BUK215-50YT
I_BG(ON) / mA
5
BUK215-50YT
4
UNDERVOLTAGE
SHUTDOWN
CLAMPING
OVERVOLTAGE
3
SHUTDOWN
OPERATING V_IG = 5 V
2
1
QUIESCENT V_IG = 0 V
0
0
10
20
30
40
50
60
70
V_BG / V
Fig.7. Typical supply characteristics, 25 ˚C.
I_G = f(V_BG); parameter V_IG
R_ON / mOhm
40
BUK215-50YT
38
36
R_ON max
34
32
30
28
26
24
22
20
1
10
100
V_BG / V
Fig.8. Typical on-state resistance,T_j = 25 ˚C.
R_ON = f(V_BG); condition I_L = 10 A; t_p = 300 s
I_G / mA
3.0
l_L = 0 A
2.5
BUK215-50YT
2.0
l_lL_L >_>IL_I(_LT_(TO_O)₎
1.5
1.0
9 V <= V_BG <= 35 V
typ.
0.5
VBG = 50 V
0
-50
0
50 _{Tj / OC} 100
150
200
Fig.9. Typical operating supply current.
I_G = f(T_j); parameters I_L, V_BG; condition V_IG = 5 V
June 2000
7
Rev 1.000