BUK215-50YT Datasheet, PDF (10/13 Pages) NXP Semiconductors – TOPFET high side switch SMD version

Philips Semiconductors
TOPFET high side switch
SMD version
Product Specification
BUK215-50YT
65 ^{VBL / V}
BUK215-50YT
60
IL =
600 mA
1 mA
55
50
-50
0
50 _{Tj / OC} 100
150
200
Fig.22. Typical battery to load clamping voltage.
V_BL = f(T_j); parameter I_L; condition I_G = 10mA
IL / A
10
BUK215-50YT
5
0
-30
-25
-20
-15
-10
V_LG / V
Fig.23. Typical negative load clamping.
I_L = f(V_LG); conditions V_IG = = 0V, T_j = 25˚C
-10 ^{VLG / V}
BUK215-50YT
-15
I_L =
-20
10 mA
10 A
-25
-30
-50
0
50 _{Tj /} O_C 100
150
200
Fig.24. Typical negative load clamping voltage.
V_LG = f(T_j); parameter I_L; condition V_IG = = 0V
I_L / A
0
BUK215-50YT
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
V_BL / V
Fig.25. Typical reverse diode characteristic.
I_L = f(V_BL); conditions V_IG = 0 V, T_j = 25 ˚C
I_L / A
50
45
current limiting
BUK215-50YT
40
35
V_BL(TO) typ.
30
Short circuit trip = 150us
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VBL / V
Fig.26. Typical overload characteristic, T_mb = 25 ˚C.
I_L = f(V_BL); condition V_BG = 16 V; parameter t_p
35 ^{VBL(TO) / V}
30
BUK215-50YT
max.
25
typ. 25˚C
20
min.
15
10
5
0
0
10
20
30
40
50
VBG / V
Fig.27. Short circuit load threshold voltage.
V_BL(TO) = f(V_BG); conditions -40˚C T_mb 150˚C
June 2000
10
Rev 1.000