BUK210-50Y Datasheet, PDF (9/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK210-50Y
V_SG(LOW) / V
1
BUK210-50Y
0.5
0
-50
0
50 _{Tj /} O_C 100
150
200
Fig.16. Typical status low characteristic.
V_SG = f(T_j); conditions V_BG ≥ 9 V, I_S = 100 µA
V_IG / V
3.00
BUK210-50Y
2.50
2.00
1.50
V_IG(ON)
V_IG(OFF)
1.00
-50
0
50 _{Tj / OC} 100
150
200
Fig.17. Typical threshold voltage characteristic.
V_IG = f(T_j); condition 9V ≤ V_BG ≤ 16V
7.50 ^{VIG / V}
BUK210-50Y
7.40
7.30
7.20
7.10
7.00
6.90
6.80
6.70
6.60
6.50
-50
0
50 _{Tj /} O_C 100
150
200
Fig.18. Typical input clamping voltage.
V_IG = f(T_j); condition I_I = 200µA, V_BG = 13V
8 ^{IS / mA}
BUK210-50Y
6
4
2
0
0
1
2
3
4
5
V_SG / V
Fig.19. Typical status low characteristic, T_j = 25 ˚C.
I_S = f(V_SG); conditions V_IG = 5V, V_BG = 13V,I_L = 0A
7.50 ^{VSG / V}
7.40
BUK210-50Y
V_IG / V = ₅
7.30
7.20
7.10
0
7.00
6.90
6.80
6.70
6.60
6.50
-50
0
50 _{Tj /} O_C 100
150
200
Fig.20. Typical status clamping voltage.
V_SG = f(T_j); condition I_S = 100µA, V_BG = 13V
20 ^{IS / mA}
BUK210-50Y
15
10
5
0
0
2
4
6
8
10
V_SG / V
Fig.21. Typical status characteristic, T_j = 25 ˚C.
I_S = f(V_SG); conditions V_IG = V_BG = 0V
November 2002
9
Rev 2.000