BUK210-50Y Datasheet, PDF (4/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK210-50Y
INPUT CHARACTERISTICS
9 V ≤ V_BG ≤ 16 V. Limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
I_I
Input current
V_IG = 5 V
20 90 160 µA
V_IG
Input clamping voltage
I_I = 200 µA
5.5
7
8.5
V
V_IG(ON)
Input turn-on threshold voltage
-
2.4
3
V
V_IG(OFF)
Input turn-off threshold voltage
1.5 2.1
-
V
∆V_IG
Input turn-on hysteresis
-
0.3
-
V
I_I(ON)
Input turn-on current
V_IG = 3 V
-
- 100 µA
I_I(OFF)
Input turn-off current
V_IG = 1.5 V
10
-
-
µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_SG
Status clamping voltage
V_SG
Status low voltage
I_S = 100 µA
I_S = 100 µA
5.5
7
8.5
V
-
-
1
V
T_mb = 25˚C
-
0.7 0.8
V
I_S
Status leakage current
V_SG = 5 V
I_S
Status saturation current¹
V_SG = 5 V
-
T_mb = 25˚C
-
2
-
15 µA
0.1
1
µA
7
12 mA
Application information
R_S
External pull-up resistor
-
47
-
kΩ
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C ≤ T_mb ≤ 150˚C and typical is at T_mb = 25 ˚C.
SYMBOL PARAMETER
CONDITIONS
Open circuit detection
9 V ≤ V_BG ≤ 35 V
I_L(TO)
Low current detect threshold
T_j = 25˚C
∆I_L(TO)
Hysteresis
MIN. TYP. MAX. UNIT
0.24 -
1.6 A
0.4 0.8 1.2 A
- 0.16 -
A
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
November 2002
4
Rev 2.000