BUK210-50Y Datasheet, PDF (10/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK210-50Y
65 ^{VBG / V}
60
BUK210-50Y
I_G =
200 mA
1 mA
55
50
-50
Fig.22.
0
50 _{Tj / OC} 100
150
200
Typical battery to ground clamping voltage.
V_BG = f(T_j); parameter I_G
65 ^{VBL / V}
BUK210-50Y
60
I_L =
600 mA
1 mA
55
50
-50
0
50 _{Tj / OC} 100
150
200
Fig.23. Typical battery to load clamping voltage.
V_BL = f(T_j); parameter I_L; condition I_G = 10mA
I_L / A
10
BUK210-50Y
5
0
-30
-25
-20
-15
-10
V_LG / V
Fig.24. Typical negative load clamping.
I_L = f(V_LG); conditions V_IG = = 0V, T_j = 25˚C
-10 ^{VLG / V}
BUK210-50Y
-15
I_L =
-20
10 mA
10 A
-25
-30
-50
0
50 _{Tj / OC} 100
150
200
Fig.25. Typical negative load clamping voltage.
V_LG = f(T_j); parameter I_L; condition V_IG = = 0V
I_L / A
0
BUK210-50Y
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
V_BL / V
Fig.26. Typical reverse diode characteristic.
I_L = f(V_BL); conditions V_IG = 0 V, T_j = 25 ˚C
I_L / A
50
45
current limiting
BUK210-50Y
40
35
V_BL(TO) typ.
30
Short circuit trip = 150us
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
V_BL / V
Fig.27. Typical overload characteristic, T_mb = 25 ˚C.
I_L = f(V_BL); condition V_BG = 16 V; parameter t_p
November 2002
10
Rev 2.000