BUK210-50Y Datasheet, PDF (8/13 Pages) NXP Semiconductors – PowerMOS transistor TOPFET high side switch

Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
100E-6 ^{IB / A}
10E-6
1E-6
BUK210-50Y
max.
typ.
100E-9
10E-9
1E-9
100E-12
-50
0
50
100
150
200
T_j / ^OC
Fig.10. Typical supply quiescent current.
I_B = f(T_j); condition V_BG = 16 V, V_IG = 0 V, V_LG = 0 V
100E-6 ^{IL / A}
10E-6
1E-6
BUK210-50Y
max.
typ.
100E-9
10E-9
1E-9
00E-12
10E-12
-50
0
50 _{Tj / OC} 100
150
200
Fig.11. Typical off-state leakage current.
I_L = f(T_j); conditions V_BL = 16 V = V_BG, V_IG = 0 V.
100E-6 ^{IS / A}
10E-6
1E-6
BUK210-50Y
max.
typ.
100E-9
10E-9
1E-9
-50
0
50 _{Tj / OC} 100
150
200
Fig.12. Status leakage current.
I_S = f(T_j); conditions V_SG = 5 V, V_IG = V_BG = 0 V
Product specification
BUK210-50Y
I_L(OC) / A
1.6
BUK210-50Y
1.2
0.8
max.
typ.
0.4
min.
0.0
-50
0
50 _{Tj / OC} 100
150
200
Fig.13. Low load current detection threshold.
I_L(OC) = f(T_j); conditions V_IG = 5 V; V_BG ≥ 9 V
5.5 ^{VBG(UV) / V}
BUK210-50Y
4.5
typ.
3.5
on
off
2.5
-50
0
50 _{Tj / OC} 100
150
200
Fig.14. Supply undervoltage thresholds.
V_BG(UV) = f(T_j); conditions V_IG = 5 V; V_BL ≤ 2 V
55 ^{VBG(OV) / V}
50
45
40
BUK210-50Y
max.
on
off
min.
35
-50
0
50 _{Tj / OC} 100
150
200
Fig.15. Supply overvoltage thresholds.
V_BG(OV) = f(T_j); conditions V_IG = 5 V; I_L = 100 mA
November 2002
8
Rev 2.000