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| BFU590G_15 Datasheet, PDF (9/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU590G
NPN wideband silicon RF transistor
*
G%
DDD
*
G%
DDD
06*
06*
*S PD[
_V_
06*
I 0+]
*S PD[
_V_
06*
I 0+]
IC = 50 mA; VCE = 8 V; Tamb = 25 ï°C.
IC = 80 mA; VCE = 8 V; Tamb = 25 ï°C.
Fig 10. Gain as a function of frequency; typical values Fig 11. Gain as a function of frequency; typical values
_V_
G%
DDD
*S PD[
G%
DDD
,& P$
,& P$
VCE = 8 V; Tamb = 25 ï°C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertion power gain as a function of collector
current; typical values
VCE = 8 V; Tamb = 25 ï°C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 13. Maximum power gain as a function of collector
current; typical values
BFU590G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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