BFU590G_15 Datasheet, PDF (1/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

BFU590G
NPN wideband silicon RF transistor
Rev. 1 — 28 April 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, medium power applications in a plastic,
4-pin SOT223 package.
The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
 Medium power, high linearity, high breakdown voltage RF transistor
 AEC-Q101 qualified
 Maximum stable gain 13 dB at 900 MHz
 P_L(1dB) 21.5 dBm at 900 MHz
 8.5 GHz f_T silicon technology
1.3 Applications
 Automotive applications
 Broadband amplifiers
 Medium power amplifiers (500 mW at a frequency of 433 MHz or 866 MHz)
 Large signal amplifiers for ISM applications
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified
Symbol Parameter
Conditions
V_CB
collector-base voltage
open emitter
V_CE
collector-emitter voltage open base
shorted base
V_EB
emitter-base voltage
open collector
I_C
collector current
P_tot
total power dissipation
T_sp  90 C
h_FE
DC current gain
I_C = 80 mA; V_CE = 8 V
C_c
collector capacitance
V_CB = 8 V; f = 1 MHz
f_T
transition frequency
I_C = 80 mA; V_CE = 8 V; f = 900 MHz
Min Typ
--
--
--
--
- 80
[1] _-
-
60 95
- 1.9
- 8.5
Max Unit
24 V
12 V
24 V
2V
200 mA
2000 mW
130
-
pF
-
GHz