BFU590G_15 Datasheet, PDF (5/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor

NXP Semiconductors
BFU590G
NPN wideband silicon RF transistor
Table 9. Characteristics …continued
T_amb = 25 C unless otherwise specified
Symbol Parameter
G_p(max) maximum power gain
s₂₁²
insertion power gain
P_L(1dB) output power at 1 dB gain compression
Conditions
f = 433 MHz; V_CE = 8 V
I_C = 10 mA
I_C = 50 mA
I_C = 80 mA
f = 900 MHz; V_CE = 8 V
I_C = 10 mA
I_C = 50 mA
I_C = 80 mA
f = 1800 MHz; V_CE = 8 V
I_C = 10 mA
I_C = 50 mA
I_C = 80 mA
f = 433 MHz; V_CE = 8 V
I_C = 10 mA
I_C = 50 mA
I_C = 80 mA
f = 900 MHz; V_CE = 8 V
I_C = 10 mA
I_C = 50 mA
I_C = 80 mA
f = 1800 MHz; V_CE = 8 V
I_C = 10 mA
I_C = 50 mA
I_C = 80 mA
f = 433 MHz; V_CE = 8 V; Z_S = Z_L = 50 
I_C = 50 mA
I_C = 80 mA
f = 900 MHz; V_CE = 8 V; Z_S = Z_L = 50 
I_C = 50 mA
I_C = 80 mA
f = 1800 MHz; V_CE = 8 V; Z_S = Z_L = 50 
I_C = 50 mA
I_C = 80 mA
Min Typ
[1]
- 18.5
- 19.5
- 19.5
[1]
- 13.5
- 13
- 13
[1]
-8
-8
-8
- 16
- 17.5
- 17.5
- 10
- 11
- 11
- 4.5
- 5.5
- 5.5
- 20
- 22.5
- 19.5
- 21.5
- 18.5
- 21
Max Unit
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
- dBm
- dBm
- dBm
- dBm
- dBm
- dBm
BFU590G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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