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| BFU590G_15 Datasheet, PDF (7/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU590G
NPN wideband silicon RF transistor
K)(
DDD
,& P$
Tamb = 25 ï°C.
(1) VCE = 3.0 V
(2) VCE = 8.0 V
Fig 3. DC current gain as a function of collector
current; typical values
,&
P$
DDD
K)(
DDD
,& P$
VCE = 8 V.
(1) Tamb = ï40 ï°C
(2) Tamb = +25 ï°C
(3) Tamb = +125 ï°C
Fig 4. DC current gain as a function of collector
current; typical values
,%
P$
DDD
9%( 9
9%( 9
Tamb = 25 ï°C.
(1) VCE = 3.0 V
(2) VCE = 8.0 V
Fig 5. Collector current as a function of base-emitter
voltage; typical values
Tamb = 25 ï°C.
(1) VCE = 3.0 V
(2) VCE = 8.0 V
Fig 6. Base current as a function of base-emitter
voltage; typical values
BFU590G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
7 of 19
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