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| BFU590G_15 Datasheet, PDF (6/19 Pages) NXP Semiconductors – NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU590G
NPN wideband silicon RF transistor
Table 9. Characteristics â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
IP3o
output third-order intercept point
Conditions
f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;
ZS = ZL = 50 ï
IC = 50 mA
IC = 80 mA
f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;
ZS = ZL = 50 ï
IC = 50 mA
IC = 80 mA
f1 = 1800 MHz; f2 = 1801 MHz;
VCE = 8 V; ZS = ZL = 50 ï
IC = 50 mA
IC = 80 mA
[1] If K > 1 then Gp(max) is the maximum power gain. If K ï¼ 1 then Gp(max) = MSG.
9.1 Graphs
Min Typ Max Unit
- 29.5 -
- 32 -
dBm
dBm
- 29 -
- 31 -
dBm
dBm
- 28 -
- 30.5 -
dBm
dBm
,&
P$
DDD
9&( 9
Tamb = 25 ï°C.
(1) IB = 25 ïA
(2) IB = 75 ïA
(3) IB = 125 ïA
(4) IB = 175 ïA
(5) IB = 225 ïA
(6) IB = 275 ïA
(7) IB = 325 ïA
Fig 2. Collector current as a function of collector-emitter voltage; typical values
BFU590G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 28 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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