SA1620 Datasheet, PDF (8/26 Pages) NXP Semiconductors – Low voltage GSM front-end transceiver

Philips Semiconductors
Low voltage GSM front-end transceiver
Product specification
SA1620
AC ELECTRICAL CHARACTERISTICS
V_CCXX = +3V, T_A = 25°C; RF = 940MHZ; IF=400MHz, f_LO=RF + IF; LO = –15dBm; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
MIN¹
LIMITS¹
-3σ
TYP
Low Noise Amplifier LNA1²
G1hi mode
9.4
10
Gain
S₂₁
G1hi mode, RF = 1800MHz
G1lo mode
–2.5
–13
–12
IP3
G1lo mode
28
∆S₂₁/∆T Gain temperature sensitivity
G1hi mode
G1lo mode
0.003
0.0140
∆S₂₁/
∆V_CCL1
∆S₂₁/∆f
S₁₂
S₁₁
S₂₂
P_-1dB
IIP3
Gain/voltage sensitivity
Gain frequency variation
Reverse isolation
Input match³
Output match³
Input 1dB gain compression
Input third order intercept
G1hi mode
50Ω
50Ω
G1hi mode
0.1
0.01
–19
–11
–14
–15.5 –14
–5.5
–4
IIP3/∆t Input third order intercept
0.011
NF
Noise figure
1.9
t_ON
Turn-on time
7
t_OFF
Turn-off time
0.5
Low Noise Amplifier LNA2²
G2hi mode
9
10
G2hi mode, RF = 1800MHz
–1.5
Gain
G2lo1 mode
–8.5 –7.5
G2lo2 mode
–22.5 –21.5
S₂₁
G2lo3 mode
–30 –28.5
G2lo1 mode
18
IP3
G2lo2 mode
20
G2lo3 mode
25
∆S₂₁/∆T Gain temperature sensitivity
G2hi mode
G2lo1,2,3 modes
0.003
0.014
∆S₂₁/
∆V_CCL2
∆S₂₁/∆f
S₁₂
S₁₁
S₂₂
P_-1dB
IIP3
Gain/voltage sensitivity
Gain frequency variation
Reverse isolation
Input match³
Output match³
Input 1dB gain compression
Input third order intercept
G2hi mode
50Ω
50Ω
G2hi mode
0.1
0.01
–24
–13
–15
–18
–16
–8
–6
IIP3/∆t Input third order intercept
0.019
NF
Noise figure
2
t_ON
Turn-on time
7
t_OFF
Turn-off time
0.5
3σ
10.6
–11
–12.5
–2.5
11
–6.5
–20.5
–27
–14
–4
MAX¹
UNITS
dB
dB/°C
dB/V
dB/MHz
dB
dB
dB
dBm
dBm
dB/°C
dB
µs
µs
dB
dB
dB
dB/°C
dB/V
dB/MHz
dB
dB
dB
dBm
dBm
dB/°C
dB
µs
µs
1997 May 22
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