PSMN4R6-60PS_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
16
R_DSon
(mΩ)
12
V_GS = 4.5 V
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5
8
5.5
6
8
4
10 15
0
0
20
40
60
80
100
I_D (A)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
V_GS
(V)
8
6
4
2
V_DS (V) = 30
12
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48
10⁴
C
(pF)
10³
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C_iss
C_oss
C_rss
0
0
20
40
60
80
Q_G (nC)
10²
10^−1
1
10
10²
V_DS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN4R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 April 2012
© NXP B.V. 2012. All rights reserved.
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