PSMN4R6-60PS_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220

PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Rev. 3 — 18 April 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for standard level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state
resistance
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 25 A; T_j = 175 °C;
see Figure 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
see Figure 13
V_GS = 10 V; I_D = 25 A; V_DS = 30 V;
see Figure 14; see Figure 15
V_GS = 10 V; T_j(init) = 25 °C; I_D = 100 A;
V_sup ≤ 60 V; R_GS = 50 Ω; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
60 V
[1] _-
-
100 A
-
-
211 W
-55 -
175 °C
-
8.05 10.6 mΩ
-
3.5 4.6 mΩ
-
14.8 -
nC
-
70.8 -
nC
-
-
266 mJ