PSMN4R6-60PS_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
20
R_DSon
(mΩ)
15
003aad766
10
5
0
4
8
12
16
20
V_GS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Drain-source on-state resistance as a function Fig 10. Sub-threshold drain current as a function of
of gate-source voltage; typical values
gate-source voltage
5
V_GS(th)
(V)
4
3
2
1
003aad280
2.4
a
2
max
1.6
typ
1.2
min
0.8
0.4
003aad696
0
−60
0
60
120
180
T_j (°C)
0
-6 0
0
60
120
180
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature.
PSMN4R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 April 2012
© NXP B.V. 2012. All rights reserved.
7 of 14