PSMN4R6-60PS_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220

NXP Semiconductors
PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
Table 7. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 25 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 30 V
Min Typ Max Unit
-
0.81 1.1 V
-
45 -
ns
-
64 -
nC
100
I_D
15
6 5.5
(A)
8
80
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5
60
4.5
40
20
V_GS (V) = 4
0
0
0.5
1
1.5
2
V_DS (V)
100
g_fs
(S)
80
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60
40
20
0
0
20
40
60
80
100
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Forward transconductance as a function of
function of drain-source voltage; typical values
drain current; typical values
100
I_D
(A)
80
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8000
C
(pF)
6000
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C_iss
60
C_rss
4000
40
T_j = 175 °C
T_j = 25 °C
20
2000
0
0
2
4
6
V_GS (V)
0
0
4
8
12
V_GS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
function of gate-source voltage, typical values
PSMN4R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 April 2012
© NXP B.V. 2012. All rights reserved.
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