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PSMN4R6-60PS_15 Datasheet, PDF (4/14 Pages) NXP Semiconductors – N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
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NXP Semiconductors
PSMN4R6-60PS
N-channel 60 V, 4.6 mΩ standard level MOSFET in TO220
103
ID
(A)
102
10
1
10−1
10−1
Limit RDSon = VDS / ID
1
DC
10
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tp =10 μ s
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 4
Min Typ Max Unit
-
0.38 0.71 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10−1
10−2
0.2
0.1
0.05
0.02
single shot
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P
tp
δ= T
10−3
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
tp (S)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values.
PSMN4R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 18 April 2012
© NXP B.V. 2012. All rights reserved.
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