PSMN1R8-40YLC_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R8-40YLC
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower
technology
10^-1
I_D
(A)
10^-2
10^-3
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Min Typ Max
3
V_{GS(th) Max (1mA)}
(V)
2
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I_D = 5mA
1mA
10^-4
1 Min (5mA)
10^-5
10^-6
0
1
2
3
V _GS (V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
0
-60
0
60
120 _{Tj (°C)} 180
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
10
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2
R_DSon
2.4
(mΩ)
2.6
a
8
1.5
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10V
6
4
3
4.5
2
V_GS (V) = 10
0
0
20
40
60
80
100
I_D (A)
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
V_GS =4.5V
1
0.5
0
-60
0
60
120
180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN1R8-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© NXP B.V. 2012. All rights reserved
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