PSMN1R8-40YLC_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R8-40YLC
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower
technology
100
I_D
(A)
4.5
10 ³
80
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2.6
10
R_DSon
(mΩ)
7.5
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60
2.4
5
40
2.5
20
V_GS(V) = 2.2
0
0
0.5
1
1.5
2
V_DS(V)
0
0
4
8
12
16
V_GS(V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
300
g_fs
(S)
250
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200
150
100
50
0
0
20
40
60
80
100
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
100
I_D
(A)
80
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60
40
20
0
0
T_j = 150 °C
T_j = 25 °C
1
2
3
4
V_GS(V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN1R8-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© NXP B.V. 2012. All rights reserved
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