PSMN1R8-40YLC_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN1R8-40YLC
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower
technology
Symbol
Q_G(tot)
Parameter
total gate charge
Conditions
V_GS = 4.5 V; I_D = 25 A; V_DS = 20 V;
Fig. 15; Fig. 14
Min Typ Max Unit
-
45
-
nC
[1] Continuous current is limited by package.
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
mb
2
S
source
3
S
source
4
G
mb
D
gate
mounting base; connected to
drain
1234
LFPAK; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN1R8-40YLC
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
25 °C ≤ T_j ≤ 175 °C
V_DGR
drain-gate voltage
25 °C ≤ T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
[1]
V_GS = 10 V; T_mb = 100 °C; Fig. 1
[1]
I_DM
peak drain current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; Fig. 4
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
T_j
junction temperature
T_sld(M)
PSMN1R8-40YLC
peak soldering temperature
All information provided in this document is subject to legal disclaimers.
Product data sheet
22 August 2012
Min Max Unit
-
40
V
-
40
V
-20 20
V
-
100 A
-
100 A
-
1128 A
-
272 W
-55 175 °C
-55 175 °C
-
260 °C
© NXP B.V. 2012. All rights reserved
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