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| PSMN1R8-40YLC_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN1R8-40YLC
N-channel 40 V 1.8 m⦠logic level MOSFET in LFPAK using NextPower
technology
Symbol
Parameter
Conditions
VESD
electrostatic discharge voltage MM (JEDEC JESD22-A115)
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
ISM
peak source current
pulsed; tp ⤠10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ⤠40 V; RGS = 50 Ω; unclamped;
Fig. 3
Min Max Unit
890 -
V
-
100 A
-
1128 A
-
248 mJ
320
ID
(A)
240
[1] Continuous current is limited by package.
003aaj880
120
Pder
(%)
80
03na19
160
(1)
40
80
0
0
50
100
150
200
Tmb(°C)
Fig. 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN1R8-40YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 August 2012
© NXP B.V. 2012. All rights reserved
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