PSMN011-60ML_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33

NXP Semiconductors
PSMN011-60ML
N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33
50
R_DSon
40
2.6 V
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2.8 V
3V
3
a
2.5
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2
30
1.5
20
4.5 V
1
10
V_GS = 10 V
0.5
0
0
10
20
30
40
50
I_D (A)
T_j = 25 °C; t_p = 300 μs
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 14. Gate charge waveform definitions
10
V_GS
(V)
8
6
4
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V_GDS = 12 V
48 V
30 V
2
0
0
8
16
24
32
40
Q_G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
PSMN011-60ML
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2013
© NXP B.V. 2013. All rights reserved
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