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PSMN011-60ML_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33
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NXP Semiconductors
PSMN011-60ML
N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33
10
Zth(j-mb)
(K/W)
003aak900
1 δ = 0.5
0.2
0.1
10-1 0.05
P
tp
δ= T
0.02
10-2
10-6
single shot
10-5
10-4
10-3
10-2
tp
t
T
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
IDSS
drain leakage current VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
Fig. 12; Fig. 13
VGS = 4.5 V; ID = 15 A; Tj = 175 °C;
Fig. 12; Fig. 13
RG
PSMN011-60ML
gate resistance
f = 1 MHz
All information provided in this document is subject to legal disclaimers.
Product data sheet
4 June 2013
Min Typ Max Unit
60
-
54
-
-
-
-
V
-
V
2.45 V
1.3 1.7 2.15 V
0.5 -
-
V
-
0.03 1
µA
-
-
500 µA
-
-
100 nA
-
-
100 nA
-
9.35 11.3 mΩ
-
11
13.1 mΩ
-
-
24.8 mΩ
-
-
28.8 mΩ
-
1.86 -
Ω
© NXP B.V. 2013. All rights reserved
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