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| PSMN011-60ML_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 | |||
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NXP Semiconductors
PSMN011-60ML
N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33
Symbol
Parameter
Conditions
Dynamic characteristics
QG(tot)
total gate charge
ID = 15 A; VDS = 30 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
ID = 15 A; VDS = 30 V; VGS = 4.5 V;
QGS
gate-source charge
Tj = 25 °C; Fig. 14; Fig. 15
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 15 A; VDS = 30 V; Tj = 25 °C;
Fig. 14; Fig. 15
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
Coss
output capacitance
VDS 30 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
Crss
reverse transfer
VDS = 30 V; VGS = 0 V; f = 1 MHz;
capacitance
Tj = 25 °C; Fig. 16
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 2 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17
trr
reverse recovery time IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
-
37.2 -
nC
-
16.6 -
nC
-
5
-
nC
-
5.1 -
nC
-
2.75 -
V
-
2191 -
pF
-
199 -
pF
-
111 -
pF
-
13.3 -
ns
-
20.2 -
ns
-
27.7 -
ns
-
15.5 -
ns
-
0.84 1.2 V
-
20.7 -
ns
-
15.7 -
nC
50
ID
(A)
40
003aak904
50
ID
(A)
10 V
40
4.5 V
003aak901
VGS = 3 V
22..88VV
30
30
20
20
2.6 V
10
175°C
Tj = 25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS (V)
Fig. 6. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 7.
10
22..44 VV
0
0
0.6
1.2
Tj = 25 °C; tp = 300 μs
2.22.2VV
1.8
2.4
3
VDS (V)
Output characteristics; drain current as a
function of drain-source voltage; typical values
PSMN011-60ML
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2013
© NXP B.V. 2013. All rights reserved
6 / 13
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