PSMN011-60ML_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33

PSMN011-60ML
N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33
4 June 2013
Product data sheet
1. General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
• High efficiency due to low switching and conduction losses
• Suitable for standard level gate drive sources
• LFPAK33 package is footprint compatible with other 3.3mm types
• Qualified to 175 °C
3. Applications
• AC-to-DC converters
• Synchronous rectification
• DC-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j = 25 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
T_j
junction temperature
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 15 A; T_j = 25 °C;
resistance
Fig. 12
V_GS = 4.5 V; I_D = 15 A; T_j = 25 °C;
Fig. 12
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 4.5 V; I_D = 15 A; V_DS = 30 V;
T_j = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
-
-
60
V
-
-
61
A
-
-
91
W
-55 -
175 °C
-
9.35 11.3 mΩ
-
11
13.1 mΩ
-
5.1 -
nC
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